Infrared spectral distribution of photoconductivity and up‐conversion in GaP light emitting diodes

SATURATION BEHAVIOR OF EXTRINSIC PHOTOCONDUCTIVITY IN GaP LIGHT EMITTING DIODES AT HIGH INFRARED INTENSITIES

Saturation of extrinsic photoconductivity in GaP:N(Zn,Te) diodes could be achieved by excitation with a TEA-CO 2laser. At wavelengths in the IO ~m range intensities of several ]00 kW/cm 2 being near the damage threshold were applied. Carrier lifetimes of 60 ps at 4.2 K and 200 ps at 77 K could be estimated. The only conceivable mechanism explaining these short time constants is the capture of i...

Effect of near-infrared light-emitting diodes on nerve regeneration.

BACKGROUND Photobiomodulation by red to near-infrared light-emitting diodes (LEDs) has been reported to accelerate wound healing, attenuate degeneration of an injured optic nerve, and promote tissue growth. The purpose of this study was to investigate the effect of LEDs on nerve regeneration. A histological study as well as a measurement of antioxidation levels in the nerve regeneration chamber...

Multispectral mid-infrared light emitting diodes on a GaAs substrate

Efficient infrared upconversion in Gap

Mechanisms for linear conversion of infrared to visible were investigated in extrinsic Gap. Efficient (1 %) conversion of 10 micron to visible was observed in GaP:Zn,O. Several device applications are discussed and a quantum counter scheme involving 111-V photocathodes is presented.

InGaAs/GaP quantum dot light-emitting diodes on Si